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Author(s) :

Ziani Zakarya, Taleb Ihsen Yasser, Ghellai Nacera.

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Abstract :

1. Abstract A new consideration of new devices have prospect for solar and photodiodes applications for various stoichiometric parameters. Because can combine the materials to obtain alloys in various energy gap. Our simulation based SILVACO TCAD [1]. After give a good the stoichiometric parameter that must use to achieve high quantum efficiency injection current and spectral responsivity for different active layers. Following this, in the first part, we create a new structure with different graduate InGaN layers focusing particularly on semiconductor GaN. In a second step, we will write methods of Simulation with silvaco with variation optic proprieties, stoichiometric proprieties and graduate layers. The results show that the InGaN photodiode has high responsivity compared to literature. Keywords: nitride of element III, semiconductors GaN, structure zinc blend, Photodiode, optimization 摘要 对于各种化学计量参数，新设备的考虑在太阳能和光电二极管应用方面具有前景。因为可以将材料组合以获得不同能隙的合金。我们的模拟基于 SILVACO TCAD [1]。在确定必须使用的化学计量参数以实现高量子效率注入电流和不同活性层的光谱响应之后，首先我们创建了一个具有不同渐变 InGaN 层的新结构，特别关注半导体 GaN。 在第二步中，我们将介绍使用 Silvaco 进行模拟的方法，包括光学特性、化学计量特性和渐变层的变化。结果显示，与文献相比，InGaN 光电二极管具有较高的响应度。 关键词：III族氮化物、GaN半导体、锌刚石结构、光电二极管、优化

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